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U.S. Patent Number 10790188 for Seamless ruthenium gap fill
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US10755922B2 - Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition - Google Patents
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US10755922B2 - Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition - Google Patents
US10755922B2 - Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition - Google Patents